由于(yu)(yu)省去(qu)了(le)涓(juan)流充電(dian)(dian)(dian)器設(she)(she)備(bei)，此處顯示(shi)的(de)(de)基于(yu)(yu)CCR的(de)(de)充電(dian)(dian)(dian)電(dian)(dian)(dian)路(lu)支(zhi)持(chi)(chi)主(zhu)要(yao)的(de)(de)電(dian)(dian)(dian)池(chi)(chi)技術。這種(zhong)(zhong)基于(yu)(yu)CCR的(de)(de)充電(dian)(dian)(dian)電(dian)(dian)(dian)路(lu)可(ke)(ke)以(yi)在各種(zhong)(zhong)應用中實現，從(cong)每天(tian)在家庭環(huan)境(jing)中使(shi)(shi)用的(de)(de)AA到便攜(xie)式(shi)設(she)(she)備(bei)和(he)(he)便攜(xie)式(shi)電(dian)(dian)(dian)動工具。背景技術可(ke)(ke)充電(dian)(dian)(dian)電(dian)(dian)(dian)池(chi)(chi)廣泛(fan)用于(yu)(yu)諸如移動電(dian)(dian)(dian)話，平板電(dian)(dian)(dian)腦，MP3播放器和(he)(he)數碼相機的(de)(de)便攜(xie)式(shi)電(dian)(dian)(dian)子設(she)(she)備(bei)中，作為(wei)現代社會(hui)日常生活(huo)中的(de)(de)必(bi)需品。OEM可(ke)(ke)以(yi)通過高效充電(dian)(dian)(dian)這些電(dian)(dian)(dian)池(chi)(chi)來更(geng)有效地支(zhi)持(chi)(chi)其(qi)設(she)(she)備(bei)的(de)(de)功能，以(yi)展示(shi)提(ti)供更(geng)長使(shi)(shi)用壽(shou)命(ming)和(he)(he)改善(shan)用戶體(ti)驗的(de)(de)產品。因此，OEM將(jiang)獲得競爭優勢并(bing)成為(wei)更(geng)大的(de)(de)市場。如何使(shi)(shi)用CCR（恒流穩壓器）器件為(wei)可(ke)(ke)充電(dian)(dian)(dian)電(dian)(dian)(dian)池(chi)(chi)創建(jian)低功耗(hao)，低成本，高效率的(de)(de)充電(dian)(dian)(dian)解決(jue)方案，該(gai)解決(jue)方案涵蓋各種(zhong)(zhong)應用。

考慮到電池充電器

充電(dian)(dian)器(qi)（以(yi)(yi)防(fang)止影響其電(dian)(dian)池是具有(you)長(chang)期操作損傷）（每次(ci)向用戶(hu)收取費用時(shi)不感到不舒服），以(yi)(yi)優化在該(gai)充電(dian)(dian)過程進行的速率，例如以(yi)(yi)終止該(gai)過程它應該(gai)在電(dian)(dian)池充電(dian)(dian)中發揮重要作用。通過實施(shi)簡(jian)單的控制(zhi)器(qi)機制(zhi)，您(nin)可以(yi)(yi)及(ji)時(shi)終止這(zhe)些(xie)費用。

充電器的類型

充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)器可(ke)(ke)以(yi)使(shi)用(yong)(yong)(yong)連續DC或脈(mo)沖DC電(dian)(dian)(dian)(dian)(dian)源方(fang)案。在(zai)(zai)(zai)每(mei)(mei)個系(xi)統(tong)輸出之前(qian)(qian)有(you)被保持在(zai)(zai)(zai)整個充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)期(qi)間的(de)(de)(de)(de)(de)恒定(ding)電(dian)(dian)(dian)(dian)(dian)平不(bu)(bu)改(gai)變，這(zhe)不(bu)(bu)影響總電(dian)(dian)(dian)(dian)(dian)荷已經(jing)進入電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)。取而(er)代(dai)之的(de)(de)(de)(de)(de)是(shi)(shi)，表(biao)達滴(di)流(liu)類型(xing)將被填充(chong)(chong)步(bu)驟一步(bu)用(yong)(yong)(yong)于(yu)低(di)容(rong)(rong)(rong)量(liang)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)如在(zai)(zai)(zai)更(geng)廣泛使(shi)用(yong)(yong)(yong)的(de)(de)(de)(de)(de)移動設備是(shi)(shi)常用(yong)(yong)(yong)的(de)(de)(de)(de)(de)。一小(xiao)時(shi)內(nei)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)容(rong)(rong)(rong)量(liang)表(biao)示為(wei)C. 為(wei)了(le)進一步(bu)說(shuo)明這(zhe)一點，請(qing)考慮(lv)額定(ding)電(dian)(dian)(dian)(dian)(dian)流(liu)為(wei)800μAh的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)。如果(guo)要(yao)(yao)在(zai)(zai)(zai)0.5 C下(xia)對此電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)，則需要(yao)(yao)400μA的(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流(liu)，持續2小(xiao)時(shi)。電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)技術(shu)除C值外，可(ke)(ke)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)所(suo)需的(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流(liu)取決于(yu)基于(yu)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)(de)(de)(de)技術(shu)。當前(qian)(qian)使(shi)用(yong)(yong)(yong)的(de)(de)(de)(de)(de)每(mei)(mei)種(zhong)技術(shu)都具有(you)更(geng)適合特定(ding)類型(xing)應用(yong)(yong)(yong)的(de)(de)(de)(de)(de)屬性(xing)。最(zui)(zui)常用(yong)(yong)(yong)的(de)(de)(de)(de)(de)可(ke)(ke)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)技術(shu)包(bao)括(kuo)：鎳氫(qing)（NiMH） – 與其他技術(shu)相比，這(zhe)是(shi)(shi)一種(zhong)非常高(gao)的(de)(de)(de)(de)(de)存儲容(rong)(rong)(rong)量(liang)，允許更(geng)高(gao)水(shui)平的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)荷存儲在(zai)(zai)(zai)更(geng)小(xiao)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)中。鎳鎘（NiCad） – 具有(you)比NiMH更(geng)長的(de)(de)(de)(de)(de)壽命和更(geng)低(di)的(de)(de)(de)(de)(de)自(zi)放電(dian)(dian)(dian)(dian)(dian)水(shui)平。NiCad是(shi)(shi)三種(zhong)技術(shu)選項中成本最(zui)(zui)低(di)的(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)生產方(fang)法(fa)(fa)。鋰離子電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi) – 適用(yong)(yong)(yong)于(yu)戶外應用(yong)(yong)(yong)，是(shi)(shi)制造(zao)在(zai)(zai)(zai)較(jiao)低(di)溫度下(xia)工作的(de)(de)(de)(de)(de)輕質(zhi)電(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)(chi)的(de)(de)(de)(de)(de)一種(zhong)方(fang)法(fa)(fa)。該技術(shu)需要(yao)(yao)相對較(jiao)短的(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)時(shi)間，并且可(ke)(ke)以(yi)處(chu)理比NiCad或NiMH等替代(dai)技術(shu)更(geng)多的(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)周期(qi)。

簡單的充電解決方案

典型的(de)充電(dian)(dian)電(dian)(dian)路如圖1所示。該(gai)電(dian)(dian)路由參考電(dian)(dian)壓(ya)，電(dian)(dian)源，LED指示燈，控制器(qi)(qi)和CCR組(zu)成。NiMH電(dian)(dian)池的(de)標稱電(dian)(dian)壓(ya)為1.2 V /電(dian)(dian)池，應(ying)充電(dian)(dian)至1.5 V~1.6 V /電(dian)(dian)池。有(you)幾種不同的(de)技(ji)術可用于決定何時(shi)(shi)結束充電(dian)(dian)。這些包括峰值電(dian)(dian)壓(ya)檢(jian)測，負Δ電(dian)(dian)壓(ya)，Δ溫度（dT / dt），溫度閾(yu)值和定時(shi)(shi)器(qi)(qi)。高端充電(dian)(dian)器(qi)(qi)可以將所有(you)這些組(zu)合在一起。

圖1

CCR充(chong)(chong)(chong)電(dian)(dian)(dian)器采(cai)用(yong)峰值(zhi)電(dian)(dian)(dian)壓(ya)(ya)檢(jian)測電(dian)(dian)(dian)路，當(dang)達到預定(ding)的(de)(de)峰值(zhi)電(dian)(dian)(dian)壓(ya)(ya)時，該(gai)電(dian)(dian)(dian)路終止(zhi)充(chong)(chong)(chong)電(dian)(dian)(dian)過程。該(gai)峰值(zhi)電(dian)(dian)(dian)壓(ya)(ya)為(wei)每個電(dian)(dian)(dian)池(chi)1.5 V，允許電(dian)(dian)(dian)池(chi)充(chong)(chong)(chong)電(dian)(dian)(dian)至最大容量的(de)(de)約97％。NiCad電(dian)(dian)(dian)池(chi)的(de)(de)工作(zuo)方式大致相同，因此(ci)它們可(ke)以以相同的(de)(de)方式充(chong)(chong)(chong)電(dian)(dian)(dian)。

鋰離子電池的充電周期更復雜

這里(li)的常見做法(fa)是在(zai)(zai)0.5 V和1 C充(chong)(chong)(chong)電(dian)(dian)(dian)容(rong)量之(zhi)間以4.2 V /電(dian)(dian)(dian)池為電(dian)(dian)(dian)池充(chong)(chong)(chong)電(dian)(dian)(dian)，然后(hou)進行涓流(liu)充(chong)(chong)(chong)電(dian)(dian)(dian)。在(zai)(zai)充(chong)(chong)(chong)電(dian)(dian)(dian)過程中(zhong)，鋰離子電(dian)(dian)(dian)池的溫(wen)升(sheng)應保持在(zai)(zai)5°C以下。如果溫(wen)度(du)上升(sheng)高于此值，則表(biao)示有可能(neng)起火(huo)。最高電(dian)(dian)(dian)池溫(wen)度(du)處于充(chong)(chong)(chong)電(dian)(dian)(dian)周期(qi)的涓流(liu)充(chong)(chong)(chong)電(dian)(dian)(dian)部(bu)分，其中(zhong)點火(huo)的風險最高。通(tong)常，使用(yong)某些類型的智能(neng)IC來監視和控(kong)制電(dian)(dian)(dian)池充(chong)(chong)(chong)電(dian)(dian)(dian)以防止這種風險。

圖2

簡單充電電路
讓我們首先討論充電電路的不同部分。

圖3

圖2顯示了如何使用3端可(ke)編程(cheng)并聯穩壓器設(she)置參考(kao)電壓（Vref）。電阻R2設(she)置為1.0kΩ，R ref可(ke)以(yi)調節到所需的Vref。R2與R ref的比率如下(xia)。

使(shi)(shi)用一個比較器將電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)(ya)與Vref進行比較。連接到(dao)反相輸(shu)入的(de)是電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)(ya)。為(wei)了避免(mian)比較器中的(de)振(zhen)蕩(dang)，將滯后(hou)添(tian)加(jia)到(dao)設(she)置(zhi)中以(yi)改善系統性能，這通過將反饋電(dian)(dian)(dian)阻(zu)器Rh放置(zhi)在(zai)輸(shu)出和非反相輸(shu)入之間來實現。1.0kΩ電(dian)(dian)(dian)阻(zu)器R3用于使(shi)(shi)R3與Rh的(de)比率盡可(ke)(ke)能簡單(dan)。通過調整Rh，滯后(hou)環帶寬(kuan)可(ke)(ke)以(yi)變化。增加(jia)Rh意味著(zhu)縮(suo)小帶寬(kuan)，減(jian)少Rh意味著(zhu)增加(jia)帶寬(kuan)。磁滯回(hui)線(xian)的(de)帶寬(kuan)必須大于200 mV，因為(wei)充電(dian)(dian)(dian)完成(cheng)后(hou)電(dian)(dian)(dian)池(chi)電(dian)(dian)(dian)壓(ya)(ya)會略微下降（參見圖3）。計(ji)算反相輸(shu)入的(de)高低電(dian)(dian)(dian)壓(ya)(ya)的(de)公式(shi)為(wei)：

圖4

圖5

圖(tu)4顯(xian)示了整個(ge)充(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)路的細節。這些包括PNP晶體管，NPN晶體管，比(bi)較器(qi)，可編程精密基準(zhun)電(dian)(dian)(dian)(dian)(dian)壓(ya)，以及與兩個(ge)CCR并(bing)聯(lian)的Q4和(he)Q5。并(bing)聯(lian)的Q4和(he)Q5用于調節電(dian)(dian)(dian)(dian)(dian)流。還可以在充(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)路內并(bing)聯(lian)連接兩個(ge)或更多(duo)個(ge)CCR以達到(dao)所有必要的電(dian)(dian)(dian)(dian)(dian)流。兩個(ge)雙(shuang)極(ji)(ji)結(jie)型(xing)晶體管（BJT），Q3和(he)Q6，用作控(kong)(kong)制充(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流的開關。Q6的基極(ji)(ji)由比(bi)較器(qi)輸出通過5.6kΩ電(dian)(dian)(dian)(dian)(dian)阻R6控(kong)(kong)制。Q6的集電(dian)(dian)(dian)(dian)(dian)極(ji)(ji)通過1.0kΩ電(dian)(dian)(dian)(dian)(dian)阻R5連接到(dao)Q3的基極(ji)(ji)。當(dang)比(bi)較器(qi)輸出變為低(di)電(dian)(dian)(dian)(dian)(dian)平(ping)時(shi)，Q6關閉(bi)，Q3關閉(bi)，從(cong)而(er)終止充(chong)電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流。LED與Q7串聯(lian)，表示電(dian)(dian)(dian)(dian)(dian)池正(zheng)在充(chong)電(dian)(dian)(dian)(dian)(dian)，并(bing)提供連續(xu)電(dian)(dian)(dian)(dian)(dian)流。電(dian)(dian)(dian)(dian)(dian)池充(chong)滿(man)電(dian)(dian)(dian)(dian)(dian)后，此狀態將(jiang)關閉(bi)。

在(zai)最(zui)(zui)近的(de)(de)(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)子(zi)系(xi)統設計中，工(gong)程(cheng)師正在(zai)努力開(kai)(kai)發(fa)更節(jie)能(neng)的(de)(de)(de)(de)(de)(de)(de)(de)(de)產品，同(tong)(tong)時在(zai)限(xian)制功耗的(de)(de)(de)(de)(de)(de)(de)(de)(de)同(tong)(tong)時更加(jia)可(ke)靠。降低(di)(di)(di)輸入電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)是提高(gao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)性能(neng)的(de)(de)(de)(de)(de)(de)(de)(de)(de)一種方法(fa)。因(yin)此，充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)中包(bao)括低(di)(di)(di)VCE（sat）晶體管和低(di)(di)(di)VF肖特基(ji)二(er)極管。功耗水平對于(yu)(yu)CCR的(de)(de)(de)(de)(de)(de)(de)(de)(de)操(cao)作(zuo)非(fei)常重要(yao)。當(dang)(dang)所有電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)通(tong)過CCR下降時，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)以(yi)(yi)(yi)連(lian)續電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，如已經(jing)討論的(de)(de)(de)(de)(de)(de)(de)(de)(de)那樣，這導致CCR溫度(du)的(de)(de)(de)(de)(de)(de)(de)(de)(de)增加(jia)。當(dang)(dang)器(qi)件開(kai)(kai)始浮動時，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)會(hui)減小(xiao)，直(zhi)到(dao)達到(dao)穩定(ding)點。為了最(zui)(zui)大限(xian)度(du)地降低(di)(di)(di)CCR的(de)(de)(de)(de)(de)(de)(de)(de)(de)溫升，電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)板(ban)上發(fa)現(xian)的(de)(de)(de)(de)(de)(de)(de)(de)(de)許(xu)多(duo)空隙都被銅覆蓋。CCR的(de)(de)(de)(de)(de)(de)(de)(de)(de)陰極連(lian)接到(dao)該銅區(qu)域以(yi)(yi)(yi)進行(xing)散熱。請注(zhu)意(yi)，當(dang)(dang)并聯使(shi)用(yong)(yong)(yong)多(duo)個CCR時，各個CCR消耗的(de)(de)(de)(de)(de)(de)(de)(de)(de)功率(lv)不是總(zong)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)，而是電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)乘以(yi)(yi)(yi)通(tong)過CCR的(de)(de)(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)。圖(tu)5顯示了CCR隨(sui)時間的(de)(de)(de)(de)(de)(de)(de)(de)(de)耗散功率(lv)。圖(tu)4所示的(de)(de)(de)(de)(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)可(ke)用(yong)(yong)(yong)于(yu)(yu)設置適合Vref的(de)(de)(de)(de)(de)(de)(de)(de)(de)可(ke)編程(cheng)精密基(ji)準。電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)和Vref連(lian)接到(dao)比較器(qi)輸入。當(dang)(dang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)低(di)(di)(di)于(yu)(yu)Vref時，連(lian)續電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)通(tong)過CCR傳送到(dao)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)。當(dang)(dang)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)壓(ya)等(deng)于(yu)(yu)Vref時，充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)完(wan)成。此電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)設計推(tui)薦(jian)使(shi)用(yong)(yong)(yong)安(an)(an)森美半導體的(de)(de)(de)(de)(de)(de)(de)(de)(de)TL431 3端可(ke)編程(cheng)分(fen)流(liu)(liu)穩壓(ya)器(qi)和LM311比較器(qi)。通(tong)過消除充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)期間的(de)(de)(de)(de)(de)(de)(de)(de)(de)涓(juan)流(liu)(liu)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)，消除了包(bao)括智能(neng)IC（用(yong)(yong)(yong)于(yu)(yu)鋰離子(zi)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)技術(shu)）的(de)(de)(de)(de)(de)(de)(de)(de)(de)需(xu)要(yao)。這有助(zhu)于(yu)(yu)將電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)保持(chi)在(zai)安(an)(an)全的(de)(de)(de)(de)(de)(de)(de)(de)(de)操(cao)作(zuo)區(qu)域并延長其使(shi)用(yong)(yong)(yong)壽命。由于(yu)(yu)省去了涓(juan)流(liu)(liu)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)器(qi)設備，這里詳述的(de)(de)(de)(de)(de)(de)(de)(de)(de)基(ji)于(yu)(yu)CCR的(de)(de)(de)(de)(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)可(ke)以(yi)(yi)(yi)使(shi)用(yong)(yong)(yong)所有主要(yao)的(de)(de)(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)池(chi)(chi)(chi)技術(shu)（NiCad，NiMH，Li-ion）。以(yi)(yi)(yi)這種方式，基(ji)于(yu)(yu)CCR的(de)(de)(de)(de)(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)在(zai)許(xu)多(duo)應(ying)用(yong)(yong)(yong)（支持(chi)寬范圍的(de)(de)(de)(de)(de)(de)(de)(de)(de)充(chong)(chong)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)流(liu)(liu)）中實現(xian)，從在(zai)家(jia)庭環境中每天使(shi)用(yong)(yong)(yong)的(de)(de)(de)(de)(de)(de)(de)(de)(de)AA到(dao)便(bian)(bian)攜式設備和便(bian)(bian)攜式電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)動工(gong)具。安(an)(an)森美半導體的(de)(de)(de)(de)(de)(de)(de)(de)(de)應(ying)用(yong)(yong)(yong)筆(bi)記AND9031提供(gong)詳細的(de)(de)(de)(de)(de)(de)(de)(de)(de)電(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)(dian)路(lu)(lu)和運行(xing)結果(guo)。