1、鋰電保護芯片正常狀態(tai)

當所有電池電壓(ya)(ya)(ya)(ya)(ya)都(dou)在過(guo)充(chong)(chong)檢測(ce)(ce)電壓(ya)(ya)(ya)(ya)(ya)（Voc）和過(guo)放檢測(ce)(ce)電壓(ya)(ya)(ya)(ya)(ya)（Vod）之間(jian)，且(qie)VINI端電壓(ya)(ya)(ya)(ya)(ya)在過(guo)流檢測(ce)(ce)電壓(ya)(ya)(ya)(ya)(ya)（Vec1）和異常充(chong)(chong)電檢測(ce)(ce)電壓(ya)(ya)(ya)(ya)(ya)（Vabc）之間(jian)，則CW1055處于正常工作狀態。

2、鋰電保護(hu)芯片過充電狀態

鋰電池保護芯片正常狀態下，任意一節電池電壓高于過充檢測電壓（Voc），且超過過充保護延遲時間（Toc），CO輸出高阻態關斷充電MOSFET，CW1055進入過充保護狀態。

在(zai)過(guo)(guo)充保護(hu)延(yan)時(shi)時(shi)間(jian)(jian)(jian)（Toc）內，若(ruo)所檢測的(de)電(dian)池電(dian)壓(ya)(ya)低于過(guo)(guo)充檢測電(dian)壓(ya)(ya)（Voc）的(de)時(shi)間(jian)(jian)(jian)超(chao)過(guo)(guo)過(guo)(guo)充重置(zhi)(zhi)延(yan)時(shi)（Treset），則過(guo)(guo)充累積的(de)延(yan)遲(chi)時(shi)間(jian)(jian)(jian)（Toc）會(hui)被(bei)重置(zhi)(zhi)。否(fou)則，電(dian)池電(dian)壓(ya)(ya)的(de)下(xia)降就會(hui)被(bei)認為(wei)是無關的(de)干(gan)擾從而被(bei)屏蔽(bi)。

3、鋰(li)電(dian)保護芯片過(guo)充電(dian)保護解除條件：

1.所(suo)有電(dian)(dian)池電(dian)(dian)壓處于過(guo)充解(jie)除電(dian)(dian)壓（Vocr）以下且(qie)超(chao)過(guo)過(guo)充解(jie)除延遲時間（Tocr）。

2.VM端電(dian)壓大(da)于負載檢測(ce)(ce)電(dian)壓（Vload）且所有電(dian)池電(dian)壓都低于過充檢測(ce)(ce)電(dian)壓（Voc）。

4、鋰(li)電保護(hu)芯片過放(fang)電狀(zhuang)態

正常狀態下（無負載），任意(yi)一(yi)節(jie)電(dian)池(chi)電(dian)壓低于(yu)過(guo)(guo)放保(bao)護(hu)電(dian)壓（Vod），且超(chao)過(guo)(guo)過(guo)(guo)放保(bao)護(hu)延遲時間（Tod），DO輸出低電(dian)平關(guan)斷放電(dian) MOSFET，CW1055進入過(guo)(guo)放保(bao)護(hu)狀態。同時CO輸出高阻態，關(guan)斷充(chong)電(dian) MOSFET。

5、過放電保護(hu)解除條件：

1.VM處于休眠檢測(ce)電(dian)壓(ya)（Vslp）和充(chong)電(dian)器檢測(ce)電(dian)壓(ya)（Vcharge）之間。所有電(dian)池電(dian)壓(ya)高于過(guo)放(fang)解除(chu)電(dian)壓(ya)（Vodr）且維持超過(guo)過(guo)放(fang)解除(chu)延時(shi)（Todr）。

2.VM電(dian)壓小于充電(dian)器檢測電(dian)壓（Vcharge）且所有電(dian)池(chi)都(dou)高于過放保護電(dian)壓（Vod）。

6、鋰(li)電保護(hu)芯片休眠(mian)狀(zhuang)態

CW1055進入(ru)過(guo)放保護(hu)狀態，并超過(guo)休(xiu)眠延時時間（Tslp），則CW1055會(hui)進入(ru)休(xiu)眠狀態。DO保持低電平，CO保持高阻態，維(wei)持充(chong)放電MOSFET的狀態。休(xiu)眠狀態解(jie)除條(tiao)件：VM電壓處于Vslp電壓以下。

7、鋰電保護(hu)芯片過電流狀態

CW1055內置(zhi)三級(ji)過(guo)流檢測，過(guo)流1，過(guo)流2和短路保(bao)護。

保(bao)護(hu)機制：通過VINI端(duan)檢測(ce)主回(hui)路上(shang)檢流(liu)電阻的壓降(jiang)，來判斷是否進行相應的過流(liu)保(bao)護(hu)。

以過流(liu)(liu)1為(wei)例，放電(dian)(dian)電(dian)(dian)流(liu)(liu)跟隨外部負載變化，VINI端檢(jian)(jian)測到檢(jian)(jian)流(liu)(liu)電(dian)(dian)阻上(shang)的電(dian)(dian)壓大于過流(liu)(liu)保護閥(fa)值(zhi)（Vec1）并維持超過過流(liu)(liu)保護延遲(chi)時間（Tec1），DO輸出低電(dian)(dian)平關斷放電(dian)(dian)MOSFET，同時CO輸出高阻關斷充電(dian)(dian)MOSFET。

CW1055進入過流保護狀態。

在過流(liu)保護狀態，ECR端子輸出VDD電(dian)(dian)壓驅動外部 MOSFET打開(kai)，將(jiang)限流(liu)電(dian)(dian)阻連接至放(fang)電(dian)(dian)回路，電(dian)(dian)阻的(de)阻值決定了放(fang)電(dian)(dian)恢復(fu)電(dian)(dian)流(liu)的(de)大小。

過流(liu)解(jie)除條件：

VM端子的電壓低于(yu)VDD/2，過流保護解除(chu)。

8、鋰電(dian)保護芯片預充(chong)電(dian)

CW1055進(jin)入(ru)過放(fang)保護（Vod）后，CO、DO端子(zi)關(guan)閉(bi)，充(chong)(chong)放(fang)電(dian)(dian)(dian)(dian)MOSFET關(guan)閉(bi)。電(dian)(dian)(dian)(dian)池充(chong)(chong)電(dian)(dian)(dian)(dian)時，PRE端子(zi)驅動(dong)外置(zhi)MOSFET與(yu)VDD相(xiang)接形(xing)成一(yi)個小電(dian)(dian)(dian)(dian)流的充(chong)(chong)電(dian)(dian)(dian)(dian)回路(lu)。一(yi)旦所(suo)有電(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)壓(ya)超過過放(fang)保護電(dian)(dian)(dian)(dian)壓(ya)（Vod）則進(jin)入(ru)正常充(chong)(chong)電(dian)(dian)(dian)(dian)狀態，即CO=VDD、PRE=高阻態。

9、鋰電保護芯片異(yi)常電池檢測

在預充(chong)電(dian)(dian)狀態(tai)，任意一節電(dian)(dian)池(chi)(chi)低(di)于異常電(dian)(dian)池(chi)(chi)檢測電(dian)(dian)壓(ya)（Vbad）以下時(shi)，計(ji)時(shi)器開始工作，充(chong)電(dian)(dian)三分鐘(zhong)后，若(ruo)電(dian)(dian)池(chi)(chi)電(dian)(dian)壓(ya)仍低(di)于異常電(dian)(dian)池(chi)(chi)檢測電(dian)(dian)壓(ya)（Vbad），CW1055認為該電(dian)(dian)池(chi)(chi)已損壞，PRE端子關閉預充(chong)電(dian)(dian)MOSFET，終止充(chong)電(dian)(dian)。均衡功能(neng)

電池(chi)(chi)容(rong)量均(jun)衡功能用(yong)來均(jun)衡電池(chi)(chi)組中(zhong)各(ge)節電池(chi)(chi)容(rong)量。

在CW1055系列產品(pin)中，若某一節電池(chi)電壓高于平(ping)衡(heng)(heng)啟(qi)動(dong)電壓（Vbal），而其他電池(chi)電壓低于平(ping)衡(heng)(heng)啟(qi)動(dong)電壓（Vbal）時，均(jun)衡(heng)(heng)開啟(qi)，外(wai)置放電回(hui)路(lu)導通。當開啟(qi)放電回(hui)路(lu)的(de)電池(chi)電壓降至平(ping)衡(heng)(heng)遲(chi)滯(zhi)電壓（Vbalhys）

以下(xia)時，或者此節電池電壓(ya)達到(dao)過充(chong)檢(jian)測電壓(ya)（Voc），均(jun)衡關閉。

CW1055可以(yi)最多(duo)同時(shi)(shi)開啟四路均(jun)(jun)衡(heng)(heng)(heng)。所(suo)有(you)(you)電(dian)(dian)(dian)(dian)池(chi)(chi)都(dou)高于(yu)平衡(heng)(heng)(heng)啟動電(dian)(dian)(dian)(dian)壓(ya)(ya)（Vbal）時(shi)(shi)，均(jun)(jun)衡(heng)(heng)(heng)不(bu)會開啟。通(tong)過(guo)設(she)置，CW1055可以(yi)選擇過(guo)充保護后(hou)均(jun)(jun)衡(heng)(heng)(heng)繼續工(gong)作。即，電(dian)(dian)(dian)(dian)池(chi)(chi)過(guo)充保護后(hou)，電(dian)(dian)(dian)(dian)池(chi)(chi)外置均(jun)(jun)衡(heng)(heng)(heng)放電(dian)(dian)(dian)(dian)回路仍然繼續工(gong)作，當所(suo)有(you)(you)電(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)壓(ya)(ya)均(jun)(jun)低于(yu)過(guo)充解(jie)除(chu)電(dian)(dian)(dian)(dian)壓(ya)(ya)（Vocr）時(shi)(shi)，CW1055打(da)開CO端(duan)MOSFET，電(dian)(dian)(dian)(dian)池(chi)(chi)繼續充電(dian)(dian)(dian)(dian)。如此循環直至所(suo)有(you)(you)電(dian)(dian)(dian)(dian)池(chi)(chi)電(dian)(dian)(dian)(dian)壓(ya)(ya)都(dou)在平衡(heng)(heng)(heng)啟動電(dian)(dian)(dian)(dian)壓(ya)(ya)（Vbal）之上(shang)。

CW1055可選是否采用分時均衡(heng)。

分時(shi)均(jun)(jun)(jun)衡，即當均(jun)(jun)(jun)衡啟(qi)動時(shi)，每個通道(dao)(dao)的均(jun)(jun)(jun)衡依次開(kai)啟(qi)，單通道(dao)(dao)的開(kai)啟(qi)時(shi)間(jian)8ms。若兩個電(dian)池(chi)(chi)同時(shi)均(jun)(jun)(jun)衡時(shi)，每個通道(dao)(dao)各依次工作8ms。即使單通道(dao)(dao)開(kai)啟(qi)瞬間(jian)電(dian)池(chi)(chi)電(dian)壓低于均(jun)(jun)(jun)衡回復值，也需要做(zuo)完8ms的放電(dian)電(dian)流后再關(guan)閉。

分時均(jun)衡(heng)(heng)可以使均(jun)衡(heng)(heng)電路熱耗散設(she)計的利用率(lv)最(zui)大化，即增加(jia)平均(jun)均(jun)衡(heng)(heng)電流。

電池(chi)節數選(xuan)擇(ze)

SEL1、SEL2是電(dian)池串聯(lian)數選擇(ze)端子，可以通(tong)過它(ta)們來選擇(ze)電(dian)池串聯(lian)數量(liang)，如下表：

當CW1055的VDD電(dian)(dian)壓(ya)小于0V充(chong)(chong)電(dian)(dian)開(kai)始(shi)電(dian)(dian)壓(ya)（Vov），連接充(chong)(chong)電(dian)(dian)器(qi)且(qie)充(chong)(chong)電(dian)(dian)器(qi)輸出電(dian)(dian)壓(ya)高(gao)于PRE 端 M OSFET開(kai)啟(qi)閥(fa)值時，預充(chong)(chong)電(dian)(dian)MOSFET開(kai)啟(qi)，0V電(dian)(dian)池開(kai)始(shi)充(chong)(chong)電(dian)(dian)。

10、鋰電保護芯(xin)片延遲時(shi)間設(she)置

延遲時間是指CW1055從(cong)檢測(ce)到電(dian)壓達到設定的保(bao)護閥值至(zhi)CW1055驅動CO/DO端(duan)輸(shu)出高/低(di)電(dian)平的時間。

CW1055的過充、過放、過流(liu)1和過流(liu)2保護(hu)都(dou)可以通過外部電容來設置延遲時(shi)間。

CW1055通過(guo)內置電(dian)流(liu)源給(gei)外部(bu)電(dian)容(rong)充電(dian)，一旦電(dian)容(rong)電(dian)壓達(da)到設定的(de)電(dian)壓閥值(zhi)就觸發保護(hu)動作。

不(bu)同端(duan)口輸出電(dian)流如下：

CCT=0.2uA；CDT=2uA；CIT=0.2uA延遲時(shi)間T=1.6V·/I（s）以過充電保(bao)護為例，CCT端連(lian)接0.1uF的(de)電容，延遲時(shi)間T=（1.6*0.1u/0.2uA）s，即0.8s。

其他延遲時間計(ji)算與過充保護相同。

11、鋰電保護(hu)芯片的溫度保護(hu)

NTC電(dian)阻的(de)阻值(zhi)會隨(sui)著溫度(du)的(de)變化而變化，若(ruo)RCOT、RDOT端(duan)檢測到的(de)電(dian)壓達到內(nei)部比較閥(fa)值(zhi)，且維持Tcot/Tdot時間，充電(dian)過溫保(bao)護和放電(dian)過溫保(bao)護觸發。

充(chong)電(dian)過溫保護后，充(chong)電(dian)MOSFET關斷，但(dan)放電(dian)MOSFET打開(kai)；放電(dian)過溫保護后，充(chong)放電(dian)MOSFET同時關斷。

過溫閥值設置步驟

1.選擇NTC電阻；

2.確定充電過溫保護閥值，如(ru)：50℃；

3.根(gen)據NTC電阻的(de)曲線圖，找到50℃對應的(de)電阻值，如35kQ；

4.使用(yong)相同阻(zu)值的正常(chang)電(dian)阻(zu)連接至(zhi)RCOT引腳；

5.放電(dian)過溫保(bao)護(hu)設置使用相同(tong)的方法，但(dan)電(dian)阻(zu)需連接至RDOT引腳；

6.通過(guo)選擇(ze)電阻(zu)來設(she)定合適的過(guo)溫保護溫度CW1055使用(yong)一個NTC來達到(dao)不同(tong)的充(chong)電過(guo)溫和(he)放電過(guo)溫閥值設(she)定。但此(ci)電路必須(xu)應(ying)用(yong)于充(chong)放電異(yi)口(kou)的應(ying)用(yong)設(she)計(ji)。如果充(chong)放電同(tong)口(kou)，充(chong)電過(guo)溫和(he)放電過(guo)溫只能使用(yong)一個溫度閥值。

CW1055可(ke)選(xuan)低(di)溫(wen)保護。

低溫保護只針對充電，在RCOT端(duan)進行設(she)置，設(she)置方式與過溫保護一致。

若(ruo)選擇低溫(wen)(wen)保護，充電(dian)過溫(wen)(wen)和放電(dian)過溫(wen)(wen)只能使用(yong)一個溫(wen)(wen)度(du)閥值(zhi)。