鎳氫電池性能與什么有關？鎳氫電池性能(neng)的(de)影響因素有(you)很(hen)多，包括(kuo)正(zheng)/負極板的(de)基(ji)材，貯氫合(he)金的(de)種類，活性物質的(de)顆粒(li)度，添(tian)加劑(ji)的(de)類別和數量，以及制作工藝(yi)、電解(jie)液、隔膜、化成工藝(yi)等許多方(fang)面。

下面(mian)就添加劑（Co）、電(dian)解液、隔(ge)膜以及(ji)化成工藝等對電(dian)池(chi)性能(neng)的(de)影(ying)響這幾方面(mian)進行一下簡要(yao)的(de)探討。

1、正(zheng)極添加CoO對電極性能的影響

將鉆添(tian)(tian)加(jia)到Ni（OH）2電(dian)極中，主要是(shi)以形成(cheng)高導電(dian)性之CooOH，在(zai)活化階段(duan)充電(dian)過程中，被氧(yang)化成(cheng)CoOOH，從而(er)提高極片(pian)的導電(dian)性，由于此反應不可逆，因此添(tian)(tian)加(jia)Co對電(dian)極的容量并無貢獻。

在Ni（OH）2電(dian)(dian)(dian)(dian)極中添(tian)加(jia)(jia)鉆(zhan)能(neng)增(zeng)加(jia)(jia)其質(zhi)子(zi)導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)(xing)(xing)和電(dian)(dian)(dian)(dian)子(zi)導(dao)(dao)電(dian)(dian)(dian)(dian)性(xing)(xing)(xing)，從而提高(gao)(gao)正(zheng)極活(huo)性(xing)(xing)(xing)物(wu)質(zhi)的(de)(de)利用(yong)率，改(gai)善充(chong)放電(dian)(dian)(dian)(dian)性(xing)(xing)(xing)能(neng)和增(zeng)大(da)析氧(yang)過(guo)電(dian)(dian)(dian)(dian)位(wei)(wei)，從而降(jiang)低充(chong)電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)壓提高(gao)(gao)充(chong)電(dian)(dian)(dian)(dian)效率。但(dan)是(shi)過(guo)量(liang)的(de)(de)鉆(zhan)添(tian)加(jia)(jia)不但(dan)導(dao)(dao)致電(dian)(dian)(dian)(dian)池(chi)成(cheng)本(ben)(ben)增(zeng)加(jia)(jia)，還將降(jiang)低放電(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)位(wei)(wei)。添(tian)加(jia)(jia)量(liang)對(dui)正(zheng)極利用(yong)率的(de)(de)影響(xiang)：添(tian)加(jia)(jia)極少(shao)量(liang)的(de)(de)（2Wt%）表(biao)面未(wei)經(jing)預氧(yang)化的(de)(de)Coo即可獲(huo)得較高(gao)(gao)的(de)(de)正(zheng)極活(huo)性(xing)(xing)(xing)物(wu)質(zhi)利用(yong)率，在5Wt%-10Wt%范圍(wei)內可獲(huo)得最佳(jia)的(de)(de)效果。在加(jia)(jia)入(ru)量(liang)高(gao)(gao)于10Wt%后，電(dian)(dian)(dian)(dian)池(chi)容量(liang)反而有所下降(jiang)，這(zhe)是(shi)由于添(tian)加(jia)(jia)量(liang)太高(gao)(gao)，減少(shao)了活(huo)性(xing)(xing)(xing)物(wu)質(zhi)的(de)(de)填充(chong)量(liang)，則電(dian)(dian)(dian)(dian)池(chi)容量(liang)不可能(neng)提高(gao)(gao)，而且亦加(jia)(jia)大(da)正(zheng)極制作成(cheng)本(ben)(ben)。

鉆(zhan)加(jia)入量(liang)對(dui)電(dian)池大(da)電(dian)流放電(dian)性(xing)能(neng)的(de)影響：鉆(zhan)的(de)加(jia)入對(dui)改善(shan)電(dian)池大(da)電(dian)流放電(dian)性(xing)能(neng)具有(you)很好的(de)效果，加(jia)入量(liang)越多，大(da)電(dian)流放電(dian)性(xing)能(neng)越好，但(dan)加(jia)入量(liang)過(guo)多，成本亦升高越多，且電(dian)池容量(liang)下降，合適(shi)的(de)比例為5WM%-10W%。

鉆在電(dian)(dian)(dian)(dian)活化期間（第一(yi)次充(chong)電(dian)(dian)(dian)(dian)），由于Co（OH）2的(de)(de)(de)氧化電(dian)(dian)(dian)(dian)位比Ni（OH2的(de)(de)(de)氧化電(dian)(dian)(dian)(dian)位低(di)(di)，這(zhe)導(dao)致在Ni（OH2轉化為NiOOH之前便形成穩(wen)定的(de)(de)(de)Co0OH，既大大降低(di)(di)了顆粒之間的(de)(de)(de)接觸電(dian)(dian)(dian)(dian)阻，也大大提(ti)高了顆粒與基體(ti)的(de)(de)(de)導(dao)電(dian)(dian)(dian)(dian)性。如果放電(dian)(dian)(dian)(dian)結束后(hou)(hou)電(dian)(dian)(dian)(dian)壓不(bu)明顯低(di)(di)于1.0V，則CoOOH不(bu)再參與電(dian)(dian)(dian)(dian)池后(hou)(hou)續反應，這(zhe)樣負(fu)極就獲得了對應于提(ti)供的(de)(de)(de)這(zhe)一(yi)總電(dian)(dian)(dian)(dian)荷的(de)(de)(de)預(yu)(yu)先充(chong)電(dian)(dian)(dian)(dian)。如果隨后(hou)(hou)放電(dian)(dian)(dian)(dian)使正極的(de)(de)(de)可用容量已耗(hao)盡(jin)，但由于預(yu)(yu)先充(chong)電(dian)(dian)(dian)(dian)的(de)(de)(de)緣故(gu)，負(fu)極仍然有放電(dian)(dian)(dian)(dian)儲備，它在一(yi)定程度上可以避免電(dian)(dian)(dian)(dian)池充(chong)電(dian)(dian)(dian)(dian)末期負(fu)極大量析(xi)氫(qing)，并保(bao)證氫(qing)氣復(fu)合效率。

2.2電(dian)解液對電(dian)池(chi)性能(neng)的(de)影(ying)響

電(dian)(dian)解液(ye)作為電(dian)(dian)池的(de)(de)重要(yao)組成部分，它的(de)(de)組成、濃度、數量的(de)(de)多少以及雜(za)質的(de)(de)種(zhong)類(lei)和數量都將對(dui)電(dian)(dian)池的(de)(de)性能產生至關重要(yao)的(de)(de)影(ying)響(xiang)。它直接影(ying)響(xiang)電(dian)(dian)池的(de)(de)容電(dian)(dian)量、內(nei)阻、循環(huan)壽命、內(nei)壓等(deng)性能。

通過對比發(fa)現，電解(jie)液一般采用大約7mol/l的KOH溶液（也有(you)以一定NaOH代替KOH的），當然電解(jie)液中(zhong)也有(you)加入少量其(qi)他成分如(ru)LiOH等(deng)的，但對一些雜質諸如(ru)碳酸鹽、氯化物、硫化物等(deng)均要求較高。

電(dian)(dian)(dian)(dian)(dian)池(chi)的正、負(fu)極(ji)片(pian)只有在電(dian)(dian)(dian)(dian)(dian)解(jie)(jie)(jie)(jie)液(ye)中(zhong)才能發生電(dian)(dian)(dian)(dian)(dian)化(hua)學反應(ying)。對于一(yi)(yi)(yi)顆封口(kou)的成品電(dian)(dian)(dian)(dian)(dian)池(chi)來說，其中(zhong)的空間是一(yi)(yi)(yi)定的。若(ruo)(ruo)電(dian)(dian)(dian)(dian)(dian)解(jie)(jie)(jie)(jie)液(ye)太(tai)多，會(hui)造(zao)成封口(kou)氣(qi)室空間變小而使(shi)(shi)電(dian)(dian)(dian)(dian)(dian)池(chi)在充放(fang)電(dian)(dian)(dian)(dian)(dian)過程中(zhong)的內(nei)(nei)壓上升；另(ling)一(yi)(yi)(yi)方面，電(dian)(dian)(dian)(dian)(dian)解(jie)(jie)(jie)(jie)液(ye)太(tai)多造(zao)成堵塞(sai)隔膜孔，阻(zu)止了氧(yang)氣(qi)的傳導，不(bu)(bu)利氫(qing)氣(qi)迅(xun)速復合，也會(hui)使(shi)(shi)電(dian)(dian)(dian)(dian)(dian)池(chi)的內(nei)(nei)壓上升并可能氧(yang)化(hua)極(ji)片(pian)致(zhi)使(shi)(shi)極(ji)片(pian)鈍化(hua)容(rong)量(liang)下降，內(nei)(nei)壓的上升可能造(zao)成電(dian)(dian)(dian)(dian)(dian)池(chi)漏液(ye)、爬堿、使(shi)(shi)得(de)電(dian)(dian)(dian)(dian)(dian)池(chi)失效。但若(ruo)(ruo)電(dian)(dian)(dian)(dian)(dian)解(jie)(jie)(jie)(jie)液(ye)太(tai)少，會(hui)使(shi)(shi)得(de)極(ji)片(pian)不(bu)(bu)能完全(quan)浸漬到電(dian)(dian)(dian)(dian)(dian)解(jie)(jie)(jie)(jie)液(ye)，從而電(dian)(dian)(dian)(dian)(dian)化(hua)學反應(ying)不(bu)(bu)完全(quan)或者說極(ji)片(pian)的某些(xie)部分不(bu)(bu)能發生電(dian)(dian)(dian)(dian)(dian)化(hua)學反應(ying)，使(shi)(shi)得(de)電(dian)(dian)(dian)(dian)(dian)池(chi)容(rong)量(liang)達不(bu)(bu)到設計要求(qiu)，內(nei)(nei)阻(zu)變大，循(xun)環壽命變短。

應(ying)該(gai)注(zhu)意電解液的濃度，以減少濃差電阻。

為何(he)電(dian)池在貯(zhu)存和(he)使用(yong)過程(cheng)中（循環）會(hui)出(chu)現內(nei)阻(zu)升高(gao)和(he)放電(dian)容(rong)量降低以及充電(dian)效率降低呢？原(yuan)因(yin)是多方面的(de)：

首先，添加(jia)劑Co在貯存和(he)使(shi)用過程中會往極片的而(er)導(dao)致極片表面(mian)的Co含量降(jiang)低(di)，從而(er)使(shi)得極片表面(mian)的接(jie)觸(chu)電(dian)阻(zu)增大（表現為內阻(zu)上升），從而(er)降(jiang)低(di)充電(dian)效率和(he)析氧過電(dian)位，最終導(dao)致放電(dian)容量下降(jiang)。

其(qi)次，在循環(huan)過(guo)程中，極(ji)片被電解液(ye)腐蝕，導(dao)致(zhi)(zhi)極(ji)片粉(fen)末松散、脫落或者說接觸(chu)不好(hao)（粒子(zi)(zi)與粒子(zi)(zi)、粒子(zi)(zi)與基材之(zhi)間）導(dao)致(zhi)(zhi)內阻升高，以及過(guo)度充/放(fang)電致(zhi)(zhi)使極(ji)片受到損傷(shang)。

其(qi)三，可能(neng)是由(you)于(yu)極片膨脹，把隔(ge)膜(mo)中的電解液擠干和吸出(chu)，由(you)于(yu)電化學反應總(zong)是從表面(mian)開始進(jin)行而后再向(xiang)深層發展(zhan)，因(yin)此導致(zhi)(zhi)電化學反應不完全(quan)，導致(zhi)(zhi)放電容(rong)量下(xia)降；并由(you)于(yu)電解液的匱乏，致(zhi)(zhi)使內阻升高（濃差電阻和離子傳導電阻/

遷移(yi)電(dian)阻升(sheng)高），充電(dian)電(dian)位升(sheng)高，放電(dian)電(dian)位下降。

其四，可能(neng)(neng)是由于(yu)電(dian)解液(ye)中的水(shui)份在循環或儲存一段時間之后，以某種目前尚不清楚(chu)的形(xing)式存在，如結晶水(shui)、被范(fan)德華力(li)束(shu)縛、被氫(qing)鍵等(deng)力(li)所束(shu)縛，而(er)不能(neng)(neng)參與電(dian)化(hua)學反應（即(ji)升(sheng)(sheng)高了(le)電(dian)解液(ye)的濃度(du)），致使電(dian)化(hua)學過程中離子傳導困難(nan)，內(nei)阻升(sheng)(sheng)高，充電(dian)電(dian)位升(sheng)(sheng)高，放(fang)電(dian)電(dian)位下降，最終導致放(fang)電(dian)容量下降。

最后，也可能是由于(yu)電(dian)池在循環或(huo)儲存過程中，電(dian)解液被重(zhong)新分配、擴散和滲透到極片的(de)深(shen)層中去，致使電(dian)極表面的(de)電(dian)解液量下降，而電(dian)化(hua)學反應總(zong)是從表面開始進(jin)行而后再向深(shen)層發展，因此導(dao)致電(dian)化(hua)學反應不完全從而出(chu)現一系列的(de)間題。

當然，電池在使用(yong)過程中過度充/放電，致使電池壓，氫氣/氧氣在出的同時(shi)帶出電解(jie)液，從而使得電解(jie)液干(gan)涸，也(ye)是重(zhong)要原因之一(yi)。

解剖開(kai)貯存和(he)使用(yong)過的(de)(de)(de)電池，會(hui)發現電池內(nei)部的(de)(de)(de)極(ji)板和(he)隔膜紙干燥（目視），也許是以(yi)上(shang)所述原因(yin)之一或幾(ji)個因(yin)素(su)共同作用(yong)的(de)(de)(de)結果。

2.3隔膜(mo)對電池(chi)性能的影響

隔膜作為電(dian)池的(de)正、負(fu)極之間的(de)隔離板，首先其(qi)必(bi)須具(ju)備(bei)良(liang)好的(de)電(dian)絕(jue)緣性(xing)(xing)(xing)，其(qi)次(ci)由于(yu)它(ta)于(yu)電(dian)解液中處于(yu)浸濕狀態，其(qi)必(bi)須具(ju)備(bei)良(liang)好的(de)耐堿(jian)性(xing)(xing)(xing)；并(bing)且要有良(liang)好的(de)透氣性(xing)(xing)(xing)等。因此我們應(ying)當選(xuan)用在較寬(kuan)廣溫度范圍(wei)內（-55℃-85℃）保持(chi)電(dian)子穩定(ding)性(xing)(xing)(xing)、體(ti)(ti)積(ji)穩定(ding)性(xing)(xing)(xing)和(he)化學穩定(ding)性(xing)(xing)(xing)，對電(dian)子呈(cheng)高阻，對離子呈(cheng)低阻，便于(yu)氣體(ti)(ti)擴(kuo)散盡量薄(bo)的(de)隔離板。

隔(ge)膜性(xing)能的好壞在很(hen)大程度上(shang)將影響(xiang)電(dian)池的循環(huan)壽(shou)命和自(zi)放(fang)電(dian)狀況(kuang)。

隔膜(mo)(mo)在循環過程中逐漸干(gan)涸是電(dian)池早期性(xing)能(neng)衰退(tui)的主要原因。隔膜(mo)(mo)的吸堿量、保(bao)(bao)液(ye)能(neng)力和透氣(qi)性(xing)是影響電(dian)池的循環壽命的關鍵因素。隔膜(mo)(mo)的親水性(xing)可保(bao)(bao)證良好的吸堿量和保(bao)(bao)液(ye)能(neng)力；而憎水性(xing)可提高隔膜(mo)(mo)的透氣(qi)性(xing)。隔膜(mo)(mo)變干(gan)與(yu)下列因素有關：

1）隔膜本身(shen)性質的變化如：吸液速(su)度和保液能力變差(cha)；

2）極(ji)片在(zai)充(chong)放(fang)電過(guo)程中發生膨脹將隔膜中電解液擠出和吸出；

3）電(dian)(dian)極表面活性(xing)和氣體復合(he)(he)能力(li)變差，電(dian)(dian)池(chi)過充時正極產生的氧氣未能快速復合(he)(he)掉，造(zao)成(cheng)電(dian)(dian)池(chi)內(nei)壓升(sheng)高，達到一定(ding)壓力(li)后從安全(quan)閥濁壓而造(zao)成(cheng)電(dian)(dian)解液損失。

電(dian)池的自放電(dian)也與(yu)隔膜有關(guan)。有人認為：鎳(nie)氫電(dian)池中(zhong)鎳(nie)電(dian)極的活性物質(zhi)與(yu)氫氣發生反應(ying)是MHNi電(dian)池自放電(dian)的主要原(yuan)因（微短路也是原(yuan)因之一）：

NiOOH+1/2H2→Ni（OH）2其(qi)中(zhong)的(de)氫(qing)(qing)氣(qi)是由于過充(chong)(chong)電(dian)靜(jing)置(zhi)后(hou)，儲氫(qing)(qing)合金釋放出其(qi)中(zhong)的(de)部分氫(qing)(qing)原(yuan)子(zi)復合而(er)成，因此(ci)(ci)我們(men)需要有較好透(tou)(tou)氣(qi)性的(de)隔膜板，此(ci)(ci)處(chu)的(de)透(tou)(tou)氣(qi)性并不是指通透(tou)(tou)氣(qi)體(ti)而(er)是指能(neng)通透(tou)(tou)協(xie)帶氫(qing)(qing)或氧(yang)原(yuan)子(zi)的(de)離(li)子(zi)的(de)透(tou)(tou)氣(qi)性。電(dian)池(chi)不過充(chong)(chong)或不充(chong)(chong)飽(bao)可降低漏(lou)電(dian)率，目前不少廠(chang)商的(de)電(dian)池(chi)充(chong)(chong)飽(bao)電(dian)后(hou)靜(jing)置(zhi)30天(tian)持電(dian)率可超過70%（常溫常壓狀態）。

當然，隔膜(mo)紙除(chu)了以上所述的(de)條件外(wai)，還應(ying)當具(ju)有足夠的(de)機械(xie)強度和(he)韌性，以保(bao)證電池在卷繞和(he)極(ji)片膨脹時不至(zhi)于斷裂。

2.4熱和電(dian)活化對電(dian)池性能的影(ying)響

采用封(feng)(feng)口(kou)化成工(gong)藝的鎳氫電(dian)池在活化初(chu)期及大倍率充(chong)電(dian)時內壓過高，造成電(dian)池漏液(ye)爬堿，容量下降，壽命縮(suo)短，安全性能變(bian)差，而且(qie)化成時間較長。對(dui)封(feng)(feng)口(kou)的鎳氫，電(dian)池進行熱(re)處(chu)理（即熱(re)活化），可以對(dui)其(qi)(qi)性能進行改(gai)善，尤其(qi)(qi)是對(dui)內壓的改(gai)善。其(qi)(qi)本(ben)質原因是：

熱處(chu)理的(de)(de)過(guo)程(cheng)中(zhong)(zhong)，負極(ji)中(zhong)(zhong)的(de)(de)貯(zhu)氫(qing)合(he)(he)金表(biao)面(mian)在強堿性電(dian)解(jie)液(ye)的(de)(de)作用下(xia)，較快(kuai)地偏析出大量的(de)(de)鎳原子(zi)族即形成富(fu)鎳層，鎳原子(zi)族均勻(yun)分散在其(qi)它(ta)疏松金屬氧(yang)化(hua)物和氫(qing)氧(yang)化(hua)物或其(qi)水合(he)(he)物中(zhong)(zhong)，在鎳原子(zi)族的(de)(de)催(cui)化(hua)作用下(xia)，過(guo)充(chong)時正(zheng)極(ji)所(suo)產(chan)生的(de)(de)氧(yang)擴散到負極(ji)表(biao)面(mian)，并(bing)與貯(zhu)氫(qing)合(he)(he)金中(zhong)(zhong)的(de)(de)氫(qing)反應(ying)，重新化(hua)合(he)(he)成水，改善貯(zhu)氫(qing)合(he)(he)金的(de)(de)消氧(yang)機能(neng)，降低電(dian)池(chi)內壓(ya)。另外，熱處(chu)理時可降低電(dian)解(jie)液(ye)的(de)(de)表(biao)面(mian)張(zhang)力，促成電(dian)解(jie)液(ye)的(de)(de)均勻(yun)分布，有(you)利(li)于電(dian)化(hua)學反應(ying)的(de)(de)均勻(yun)進行。

熱活化的時(shi)間(jian)(jian)、溫(wen)度不同(tong)對電(dian)池性能(neng)的影響也不同(tong)，時(shi)間(jian)(jian)太(tai)短達(da)不到預(yu)期(qi)效果；時(shi)間(jian)(jian)太(tai)長則浪(lang)費時(shi)間(jian)(jian)，效率太(tai)低。溫(wen)度太(tai)低反應速度過慢，溫(wen)度太(tai)高可能(neng)會(hui)導致電(dian)池短路，極片膨脹厲害，影響電(dian)池性能(neng)。一般以(yi)50-80℃為宜，2-8小時(shi)比較合適(shi)。

電(dian)(dian)(dian)(dian)(dian)活化(hua)(hua)(hua)過(guo)程初期，首(shou)先發生的(de)反應(ying)是CoO+OH-=CoOOH此(ci)(ci)反應(ying)為(wei)不可逆反應(ying)，由此(ci)(ci)使得(de)正極(ji)片的(de)導(dao)電(dian)(dian)(dian)(dian)(dian)性大(da)大(da)增強（因Ni（OH）2基本不導(dao)電(dian)(dian)(dian)(dian)(dian)而(er)且NiOOH的(de)導(dao)電(dian)(dian)(dian)(dian)(dian)性也較差），從而(er)降低電(dian)(dian)(dian)(dian)(dian)池的(de)內阻(zu)和充電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)壓(ya)，提高(gao)充電(dian)(dian)(dian)(dian)(dian)效(xiao)率和放電(dian)(dian)(dian)(dian)(dian)容量。因此(ci)(ci)可以讓(rang)負(fu)極(ji)預先充電(dian)(dian)(dian)(dian)(dian)，具有充電(dian)(dian)(dian)(dian)(dian)儲(chu)備。而(er)后期的(de)電(dian)(dian)(dian)(dian)(dian)活化(hua)(hua)(hua)只是對電(dian)(dian)(dian)(dian)(dian)極(ji)進(jin)行(xing)充放電(dian)(dian)(dian)(dian)(dian)即 Ni（OH）2與(yu)NiOOH之間來回(hui)轉化(hua)(hua)(hua)，通(tong)過(guo)這(zhe)種來回(hui)轉化(hua)(hua)(hua)（晶(jing)型轉換(huan)），在極(ji)片表(biao)面(mian)不斷產(chan)生新鮮(xian)表(biao)面(mian)，使得(de)電(dian)(dian)(dian)(dian)(dian)化(hua)(hua)(hua)學不斷反應(ying)進(jin)行(xing)下去(qu)。在后期的(de)電(dian)(dian)(dian)(dian)(dian)活化(hua)(hua)(hua)中，只要電(dian)(dian)(dian)(dian)(dian)池電(dian)(dian)(dian)(dian)(dian)壓(ya)不低于0.8V，鉆就(jiu)不參與(yu)反應(ying)。為(wei)提高(gao)化(hua)(hua)(hua)成效(xiao)率，一般以三(san)個充/放電(dian)(dian)(dian)(dian)(dian)循環為(wei)好，充/放電(dian)(dian)(dian)(dian)(dian)電(dian)(dian)(dian)(dian)(dian)流應(ying)由小(xiao)逐漸變大(da)為(wei)佳。